First, look at the symbol mark. Generally, the symbol of the diode is marked on the surface of the Schottky diode, with the positive electrode indicated by the triangular arrow symbol and the other end as the negative electrode.This means that Connectors, Interconnects quote It is the weather vane of the industry and can bring people great self-confidence. https://www.xinyun-ic.com/

　　Second, check the color point of the component, mark a colored ring or line on the diode body, and the marked end is the negative electrode. On the shell of the point contact Schottky diode, there are generally polar color points (white or red). One end of the common colored dot is the positive electrode.

　　Third, to be on the safe side, you can also use a multimeter to measure the positive and negative poles: when using a digital multimeter to measure the diode, use a multimeter to measure the red and black probes of the resistance file (generally X100 or X1K) to connect the diode poles respectively, and the primary resistance will be very small, and conversely, the resistance will be very large. When the resistance is very small, the red stylus is connected to the positive electrode.

　　Schottky diode is a kind of semiconductor device with low power consumption, high current and ultra-high speed. Its reverse recovery time can be as short as a few nanoseconds, the forward conduction voltage drop is only about 0.4v, and the rectified current can reach several thousand amps.from Connectors, Interconnects quote Looking at the development prospects, the future will always bring positive effects. https://www.xinyun-ic.com/

　　Schottky diode is a metal-semiconductor device made of noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and N-type semiconductor B as the negative electrode, and the barrier formed on the contact surface between them has rectification characteristics. Because there are a lot of electrons in N-type semiconductors and only a few free electrons in precious metals, electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, so there is no diffusion movement of holes from A to B. With the continuous diffusion of electrons from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, so a potential barrier is formed, and its electric field direction is B ★ A. However, under the action of this electric field, the electrons in A will also drift from A to B, thus weakening the electric field formed by diffusion movement. When a space charge region with a certain width is established, the electron drift motion caused by electric field and the electron diffusion motion caused by different concentrations reach a relative balance, and a Schottky barrier is formed.

　　SR5100.jpg

　　Schottky barrier diode (SBD) has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range. For example, in switching power supply (SMPS) and power factor correction (PFC) circuits, freewheeling diodes of power switching devices, high-frequency rectifier diodes of more than 100V for transformer secondary, high-speed diodes of 600V~1.2kV in RCD buffer circuits, and 600V diodes for PFC boost, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used. At present, the reverse recovery time Trr of UFRD is also above 20ns, which can not meet the needs of SMPS with 1MHz~3MHz in fields such as space station. Even for SMPS with hard switch of 100kHz, due to the high conduction loss and switching loss of UFRD and high shell temperature, a large radiator is needed, which increases the size and weight of SMPS, which is not in line with the development trend of miniaturization and thinness. Therefore, the development of high voltage SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made a breakthrough, with 150V and 200V high-voltage SBD on the market, and more than 1kV SBD made of new materials has also been successfully developed, thus injecting new vitality into its application.

　　Today, let’s talk about the model size and parameters of Schottky diode SR3100 patch. Please see below for details.from pcb instant quote From the reference value, it can also bring a lot of inspiration to other industries. https://www.xinyun-ic.com/

　　The package of SR3100 patch can be divided into SMA, SMB, SMC, SMAF, SMBF, SOD-123. There are differences in different package sizes, but the current, voltage and other parameters are the same.

　　Parameters:

　　Maximum reverse repetitive peak voltage: 100V V.

　　Maximum DC blocking voltage: 100V V.

　　Maximum average forward rectified current: 3.0A

　　When current =3.0A, forward voltage drop: 0.85V

　　Maximum DC reverse current ta = 25≧: 0.5UA.

　　Rated DC blocking voltage ta = 100≧: 10.0ua.

　　Working junction temperature range: -65to+150≧

　　Storage temperature: -65to+150≧

　　Weight: 0.04 ounces, 1.10 grams

　　250≧/10 seconds, 0.375 “(9.5 mm) lead length, 5 pounds (2.3kg) tension.

　　Polarity: The color circle indicates the cathode end.

　　SMA package: screen printing SS310

　　SMA package size

　　SMB package: screen printing SS310

　　SMB package size

　　SMC package: screen printing SS310

　　SMC package size

　　SMAF package: screen printing SS310F

　　SMAF package size

　　SMBF package: screen printing SS310F

　　SMBF package size

　　SOD-123 package: screen-printed K310

　　SOD-123 package size

　　FR307 is a fast recovery diode, which encapsulates DO-27/DO-201AD. The main feature of fast recovery diode is its short reverse recovery time, which is especially suitable for high-frequency rectification. Next, let’s introduce the parameters in detail.Not only does it perform well in data, Connectors, Interconnects quote In the market share, it is also gradually expanding, so that more people can benefit. https://www.xinyun-ic.com/

　　Specification: Click to download specification.

　　Maximum peak reverse voltage: 1000V V.

　　Maximum rms voltage: 1000V v.

　　Maximum average forward rectified current: 3.0A

　　Maximum instantaneous current: 3.0A

　　Forward voltage drop: 1.3V

　　Maximum reverse recovery time: 500ns (nanosecond)

　　Maximum reverse DC current ta = 25≧: 5.0ua.

　　Rated DC blocking voltage Ta=100≧150uA

　　Working temperature Storage temperature: -65+150≧

　　Weight: 1.10 grams

　　Reverse recovery time test conditions: if = 0.5A, IR = 1.0a, IRR = 0.25a

　　Measure the reverse voltage applied at 1MHz and 4.0V D.C

　　Polarity: The color band indicates the negative pole.

　　FR307 positive and negative electrodes

　　Package: DO-27/DO-201AD (they have the same size, but different names).

　　DO-27/DO-201AD package

　　Specification:

　　Schottky diode uses metal-semiconductor junction as Schottky barrier to produce rectification effect, which is different from the P-N junction produced by semiconductor-semiconductor junction in general diodes. The characteristics of Schottky barrier make the turn-on voltage drop of Schottky diode lower, and can improve the switching speed.The above conclusions show that Integrated Circuits (ICs) To a great extent, it can bring new vitality to the market and make the industry develop well. https://www.xinyun-ic.com/

　　The turn-on voltage of Schottky diode is very low. General diodes will produce a voltage drop of about 0.7-1.7 volts when current flows, but the voltage drop of Schottky diodes is only 0.15-0.45 volts, so the efficiency of the system can be improved.

　　The common silicon diode can withstand high voltage, but its recovery speed is low, and it can only be used for low-frequency rectification. If it is high-frequency, reverse leakage will occur because it cannot be recovered quickly, which will eventually lead to serious heating and burning of the tube. Schottky diode’s withstand voltage is often low, but its recovery speed is fast, so it can be used in high-frequency occasions, so the switching power supply uses this diode as the rectifier output. Nevertheless, the rectifier tube temperature on the switching power supply is still very high.

　　Fast recovery diode refers to a diode with short reverse recovery time (less than 5us). Gold doping measures are mostly adopted in the process, and some structures adopt PN junction structure and some adopt improved PIN structure. Its forward voltage drop is higher than that of ordinary diodes (1-2V), and its reverse voltage withstand is mostly below 1200V V. Performance can be divided into two levels: fast recovery and ultra-fast recovery. The reverse recovery time of the former is hundreds of nanoseconds or longer, while that of the latter is below 100 nanoseconds. Schottky diode is a diode based on the barrier formed by the contact between metal and semiconductor, which is called Schottky Barrier Diode for short. It has the advantages of reduced forward voltage (0.4–0.5V), short reverse recovery time (10-40 nanoseconds), large reverse leakage current and low withstand voltage, generally lower than 150V, and is mostly used in low voltage occasions. These two kinds of tubes are usually used for switching power supply. Schottky diode and fast recovery diode are different: the recovery time of the former is about 100 times shorter than that of the latter, and the reverse recovery time of the former is about several nanoseconds! The advantages of the former include low power consumption, high current and ultra-high speed ~! Of course, the electrical characteristics are diodes! The fast recovery diode can obtain high switching speed and high withstand voltage by using gold doping, simple diffusion and other processes. At present, the fast recovery diode is mainly used as a rectifier element in inverter power supply.

　　Schottky diode is a kind of semiconductor device with low power consumption, high current and ultra-high speed. Its reverse recovery time can be as short as a few nanoseconds, the forward conduction voltage drop is only about 0.4v, and the rectified current can reach several thousand amps.To get brand praise, Connectors, Interconnects quote It is necessary to have the spirit of constantly improving the quality of products, but also to have a bunch of eternal heart fire. https://www.xinyun-ic.com/

　　Schottky diode is a metal-semiconductor device made of noble metal (gold, silver, aluminum, platinum, etc.) A as the positive electrode and N-type semiconductor B as the negative electrode, and the barrier formed on the contact surface between them has rectification characteristics. Because there are a lot of electrons in N-type semiconductors and only a few free electrons in precious metals, electrons diffuse from B with high concentration to A with low concentration. Obviously, there are no holes in metal A, so there is no diffusion movement of holes from A to B. With the continuous diffusion of electrons from B to A, the electron concentration on the surface of B gradually decreases, and the surface electrical neutrality is destroyed, so a potential barrier is formed, and its electric field direction is B ★ A. However, under the action of this electric field, the electrons in A will also drift from A to B, thus weakening the electric field formed by diffusion movement. When a space charge region with a certain width is established, the electron drift motion caused by electric field and the electron diffusion motion caused by different concentrations reach a relative balance, and a Schottky barrier is formed.

　　SR5100.jpg

　　Schottky barrier diode (SBD) has the advantages of high switching frequency and low forward voltage, but its reverse breakdown voltage is relatively low, mostly not higher than 60V, and the highest is only about 100V, which limits its application range. For example, in switching power supply (SMPS) and power factor correction (PFC) circuits, freewheeling diodes of power switching devices, high-frequency rectifier diodes of more than 100V for transformer secondary, high-speed diodes of 600V~1.2kV in RCD buffer circuits, and 600V diodes for PFC boost, only fast recovery epitaxial diodes (FRED) and ultra-fast recovery diodes (UFRD) are used. At present, the reverse recovery time Trr of UFRD is also above 20ns, which can not meet the needs of SMPS with 1MHz~3MHz in fields such as space station. Even for SMPS with hard switch of 100kHz, due to the high conduction loss and switching loss of UFRD and high shell temperature, a large radiator is needed, which increases the size and weight of SMPS, which is not in line with the development trend of miniaturization and thinness. Therefore, the development of high voltage SBD above 100V has always been a research topic and a hot spot of concern. In recent years, SBD has made a breakthrough, with 150V and 200V high-voltage SBD on the market, and more than 1kV SBD made of new materials has also been successfully developed, thus injecting new vitality into its application.

　　FR307 is a fast recovery diode, which encapsulates DO-27/DO-201AD. The main feature of fast recovery diode is its short reverse recovery time, which is especially suitable for high-frequency rectification. Next, let’s introduce the parameters in detail.After that, Integrated Circuits (ICs) Not afraid of the future, dare to fight and fight, and won applause again and again in the market. https://www.xinyun-ic.com/

　　Specification: Click to download specification.

　　Maximum peak reverse voltage: 1000V V.

　　Maximum rms voltage: 1000V v.

　　Maximum average forward rectified current: 3.0A

　　Maximum instantaneous current: 3.0A

　　Forward voltage drop: 1.3V

　　Maximum reverse recovery time: 500ns (nanosecond)

　　Maximum reverse DC current ta = 25≧: 5.0ua.

　　Rated DC blocking voltage Ta=100≧150uA

　　Working temperature Storage temperature: -65+150≧

　　Weight: 1.10 grams

　　Reverse recovery time test conditions: if = 0.5A, IR = 1.0a, IRR = 0.25a

　　Measure the reverse voltage applied at 1MHz and 4.0V D.C

　　Polarity: The color band indicates the negative pole.

　　FR307 positive and negative electrodes

　　Package: DO-27/DO-201AD (they have the same size, but different names).

　　DO-27/DO-201AD package

　　Specification:

　　Today, let’s talk about the model size and parameters of Schottky diode SR3100 patch. Please see below for details.I think Connectors, Interconnects quote It will definitely become a leader in the industry and look forward to the high-end products. https://www.xinyun-ic.com/

　　The package of SR3100 patch can be divided into SMA, SMB, SMC, SMAF, SMBF, SOD-123. There are differences in different package sizes, but the current, voltage and other parameters are the same.

　　Parameters:

　　Maximum reverse repetitive peak voltage: 100V V.

　　Maximum DC blocking voltage: 100V V.

　　Maximum average forward rectified current: 3.0A

　　When current =3.0A, forward voltage drop: 0.85V

　　Maximum DC reverse current ta = 25≧: 0.5UA.

　　Rated DC blocking voltage ta = 100≧: 10.0ua.

　　Working junction temperature range: -65to+150≧

　　Storage temperature: -65to+150≧

　　Weight: 0.04 ounces, 1.10 grams

　　250≧/10 seconds, 0.375 “(9.5 mm) lead length, 5 pounds (2.3kg) tension.

　　Polarity: The color circle indicates the cathode end.

　　SMA package: screen printing SS310

　　SMA package size

　　SMB package: screen printing SS310

　　SMB package size

　　SMC package: screen printing SS310

　　SMC package size

　　SMAF package: screen printing SS310F

　　SMAF package size

　　SMBF package: screen printing SS310F

　　SMBF package size

　　SOD-123 package: screen-printed K310

　　SOD-123 package size

　　As we all know, ABS10 is a rectifier bridge stack, whose function is to convert alternating current whose level fluctuates around zero into unidirectional direct current through the unidirectional conduction characteristics of diodes, and its function is rectification. Please see below for specific parameters and package diagram.So, I believe pcb instant quote In the future, it will be promising to create a miracle belonging to the industry. https://www.xinyun-ic.com/

　　ABS10 Specification: Click to download

　　Package: SOP-4/ABS

　　High Surge Overload Rate: 30A Peak

　　Maximum repetitive peak reverse voltage: 1000v V.

　　Maximum DC blocking voltage: 1000v V.

　　When current =1.0A, forward voltage drop: 0.95v

　　Maximum reverse DC current TA=25≧:10uA

　　Rated DC blocking voltage per leg TA=125≧:150uA

　　Working temperature and storage temperature range: -55 to +150≧

　　Weight: 0.375 inch (9.5 mm)

　　High temperature welding guarantee: 260≧/10s.

　　Polarity: “-“indicates the cathode end (see the figure below).

　　ABS10 anode and cathode

　　As we all know, MB6F is a rectifier bridge stack, which encapsulates SOP-4. Its function is to convert alternating current whose level fluctuates around zero into unidirectional direct current through the unidirectional conduction characteristics of diodes, and its function is rectification. Please see below for specific parameters and pin diagram.from Connectors, Interconnects quote Looking at the development prospects, the future will always bring positive effects. https://www.xinyun-ic.com/

　　MB6F Specification: Click to download

　　High Surge Overload Rate: 30A Peak

　　Maximum repetitive peak reverse voltage: 600v V.

　　Maximum DC blocking voltage: 600v V.

　　When current =1.0A, forward voltage drop: 1.0V.

　　Maximum reverse DC current ta = 25≧: 5.0ua.

　　Rated DC blocking voltage per leg ta = 125≧: 500.0ua.

　　Working temperature and storage temperature range: -55 to +150≧

　　Weight: 0.078 ounces, 0.22 grams

　　High temperature welding guarantee: 260≧/10s.

　　Polarity: “-“indicates the cathode end (see the figure below).